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Imago Products - LEAP Si Series
 

The LEAP Si features 200nm field of view and a data rate of 5 million ions per minute.
The LEAP Si™ Metrology System is a high-performance atom probe microscope providing 3D, atomic resolution, compositional imaging and analysis to research and industry. Materials are examined by removing and analyzing individual atoms. Atoms are removed by a combination of a high electrical field and either: (1) an ultra-fast voltage pulse or (2) an ultra-fast laser pulse. The LEAP Si employs patented innovations that unlock the power of the 3D atom probe to address previously unsolved measurement challenges in semiconductors, material science, and nanomagnetics. Key features include: largest field of view, highest data rate, excellent mass resolution, and simplified sample preparation using microtip arrays. With the LEAP Si measurements that would have taken months, or been completely impossible, can be accomplished in a matter of hours.
 
 
 

Datasheet

Click here for the web datasheet for the LEAP Si

Contact

Click here to request detailed specifications for the LEAP Si.

 
LEAP Si Analysis: ~100nm FOV, 3D image of real dopant distribution (Arsenic atoms in green) in ultra shallow junction specimen. Click on the image for a larger view.
 
 
 
 
 
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