Traditionally atom probe was not a useful technique for non-conductive or semiconducting sample types. Imago's introduction of the laser pulser in 2005 enables many semiconducting samples to be measured with the LEAP 3000X Si. Key applications for semiconductor metrologists include the quantitative, 3d mapping of dopant distributions, compositional analysis of high-k films, quantitative measurement of clustering at interfaces, and silicides. In addition to these already established applications, new applications are emerging rapidy.

"Mapping dopants has been the industry Holy Grail for the past 30 years." - NSF Microscopy Panel

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As transistor structures continue to shrink to keep pace with Moore's Law the existing analysis and metrology techniques currently in use will no longer be sufficient to fully characterize the nanoscale devices. Atom probe has the unique capability to characterize the next-generation technology cycles by mapping the spatial distribution and chemical identity of dopants on the atomic scale.

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In recent years the scaling of microelectronic devices to smaller and smaller dimensions to keep pace with Moores Law has been made possible by reducing the thickness of the silicon dioxide dielectric. The result has been a gate dielectric just a few atomic layers thick through which electrons can tunnel when the transistor is in the off state which increases power consumption and heat generation. This has spurred research into the use of high-k oxides to replace silicon dioxide in the gate insulator in order to improve performance with a thicker oxide. The atom probe has been used to characterize the morphology and composition of high-k films in three dimensions to aid in the development of these devices.

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We detail the motivation and importance to the semiconductor industry of selective SiGe deposition. The challenges of this process are discussed especially process integration issues and pattern dependent deposition.